Mr. Thomas BOTTGER

Thomas Bottger is an experienced leader and technologist with over 20 years in the semiconductor and advanced packaging equipment industry. He has held senior leadership roles within the BESI group, spanning system design, product line management, and global technology and business responsibility.

His expertise focuses on Thermo-Compression, hybrid bonding, and high-density heterogeneous integration, with particular emphasis on alignment accuracy, warpage management, yield optimization, and scalability for high volume manufacturing. Throughout his career, he has worked closely with leading customers on next generation packaging solutions enabling AI, HBM, HPC, and emerging CPO architectures.

Thomas is known for bridging deep technical understanding with practical manufacturing reality, translating complex process and equipment challenges into clear strategic and executional decisions. His work consistently connects tool capability, process limits, and sustainable production readiness.

Presentation Title

Fluxless Thermo-Compression and D2W Hybrid Bonding for Sub-10 µm Interconnect Scaling in High-Performance Computing Packaging

High-performance computing (HPC) architectures for artificial intelligence and data-centric workloads increasingly rely on heterogeneous integration to overcome limitations in device scaling, power efficiency, and system bandwidth. Advanced packaging technologies must therefore support aggressive interconnect pitch reduction, stringent alignment tolerances, and high interconnect integrity across logic chiplets, high-bandwidth memory, and emerging co-packaged optical interfaces. Conventional solder-based interconnect approaches face fundamental challenges at fine pitch.

Thermo-compression bonding (TCB) and hybrid bonding represent two complementary assembly technologies capable of extending interconnect scaling beyond these limits. This work reports on recent progress in fluxless fine-pitch TCB and hybrid bonding, demonstrating reliable interconnect formation at <10 µm bump pitch for TCB and <6 µm pitch for hybrid bonding. Fluxless process integration is shown to be critical in maintaining interconnect cleanliness, reducing defectivity, and enabling copper-based interconnect schemes required for continued pitch scaling.

The applicability of fluxless TCB and hybrid bonding has been evaluated across representative HPC packaging use cases, including logic-to-logic chiplet integration, memory stacking for high-bandwidth memory architectures, and co-packaged optics, where fine pitch, low parasitics, and high interconnect density are essential. The results indicate that fluxless TCB remains a viable solution for fine-pitch solder-based interconnects approaching single-digit micrometer scales, while hybrid bonding provides a scalable path for ultra-fine pitch interconnects required by future HPC and optical-electrical integration roadmaps.

Back to Advanced Packaging & Heterogeneous Integration Summit