Dr. KouKou Suu
Executive Officer and Senior Fellow of ULVAC, Inc. ULVAC, Inc.
Dr. Koukou Suu graduated and received Ph.D degree in Engineering from Tohoku University, Japan in 1988 and 1993 respectively. He joined ULVAC, Inc. in 1993 and since then has been leading and engaging with developments of numerous semiconductor and electronics technologies including emerging non-volatile memories, high-K capacitors, LED, power devices, thin-film Li-battery as well as 3D packaging manufacturing technologies. He was General Manager of Institute of Semiconductor and Electronics Technologies of the company from 2008 to 2014. Currently he is Executive Officer and Senior Fellow of ULVAC, Inc. as well as President and CEO of ULVAC Technologies, Inc, a company representing ULVAC in North America. He is also an Adjunct Professor of Shanghai Institute of Microsystem and Information Technology of Chinese Academy of Science as well as an Adjunct Industrial Professor of University of South Australia.
Presentation Title
Manufacturing Technologies of Heterogeneous Integration for In-memory Computing
Presentation Abstract
Smart ICT (information and communication technology) in the 5G / 6G era will be constructed by “Cloud AI Computing” and “Fog / Edge AI Computing” which lead to realize the exact matching and low-latency (< 1ms) telecommunication. And IoT / IoE smart system is realized by smart functions such as stand-alone self-activation MEMS / sensors. These will bring a full-fledged “smart society” in the future. On the other hand, although Moore's law is slowing down, requirement of AI performance is rapidly increasing. “Heterogeneous integration” as an advanced packaging technology is one of solution to realize high-performance AI Chip. "Near memory" and "In-memory computing" are key technologies for analog AI. Those new-architecture and new-computing will be not only necessary for heterogeneous integration but also non-volatile memory. ULVAC has been continuously developing manufacturing technologies for non-volatile memory (PCRAM, ReRAM, FeRAM), and heterogeneous integration (2.nD, 3D, FO-WLP/ PLP, high-density organic interposer and TSV).