Dr. Raj KUMAR

Dr Raj Kumar is the VP of Technology and R&D at Infineon Technologies (Kulim), Malaysia and heading Frontend R&D, Unit Process Development, Product Engineering, Process Integration, Technology Transfer & Conversions management, Chip-Package Interactions, Test Technology and Innovations.

Raj has extensive experience in the semiconductor industry including establishing and volume ramp up of mega-scale semiconductor wafer fabs across Asia and Europe. His technical experience spans over a broad base of the technology platforms including Smart Power, Power Discrete, Flash Memories, MEMS/Sensors and Logic technologies.

Before joining Infineon in 2005, Raj worked with Semiconductor Laboratory (erstwhile Semiconductor Complex Limited), SAS Nagar Mohali where he was instrumental in establishing the National MEMS foundry, and led Etching and MEMS sections. Raj started his early career with Continental Device India Limited, New Delhi, where he headed Etching and Lithography sections.

Raj is a Senior Member of the Institute of Electrical and Electronics Engineers (IEEE) and a Life Member of the Indian Vacuum Society (IVS).

Raj holds a doctoral degree in Semiconductor Process and Modelling and a Master degree in Electronic Science with majors in Device Physics and Microelectronics.

Panelist at SEMICON University Program - Panel Discussion on "Diversity, Equity & Inclusion in the E&E Industry"

Presentation Title at SMART Enterprise Forum:
Power Beyond Silicon: WBG Semiconductors Technologies 

Silicon-based power semiconductor technologies like IGBTs, Super Junction MOSFETs and Trench-based Power MOSFETs have been the leading technologies for power management in automotive, industrial and consumer applications. 

Wide bandgap (WBG) semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) are becoming the ideal choice considering the next generation of power semiconductor devices. The key to the next essential step toward an energy-efficient world lies in the use of these new WBG power electronics materials that allow for greater power efficiency, smaller size, lighter weight, lower overall cost – or all of these together.

WBG semiconductors differ significantly from silicon as they have a larger bandgap. A bandgap, measured in electron volt (eV) refers to the energy difference in semiconductors between the top of the valence band and the bottom of the conduction band. The bandgap for silicon is ~1.1 eV, whereas SiC and GaN possess bandgaps of ~3.3 eV and ~3.4 eV, respectively. The larger distance allows wide bandgap semiconductor power devices to operate at higher voltages, temperatures, and frequencies.

As the leading power supplier with more than two decades of heritage in SiC and GaN technology development, Infineon Technologies caters to the need for smarter, more efficient energy generation, transmission, and consumption. 

This talk outlines the basis of WBG technologies, outlines the current and emerging applications, and the potential for the future.